The specification study will help us to know more about all of these devices and it will help in the replacement process. In the table below we list and compare the electrical specifications of 2N3819, MPF102, and 2N5457 JFET devices. It supports the XOn/XOff handshake mechanism. For the power control, the module is integrated with Suspend pins. The module is embedded with two voltage regulator circuits i.e. The CP2102 has a 12Mbps full-speed USB Specification 2.0 compliant. The 2N3819 JFET is a medium power device which had many applications in amplification-based circuits.īefore the replacement process, we need to check and verify the PINOUT details, because any difference in the network will badly affect the component. ICP2102 UART module is integrated with a high-speed transceiver. The electrical specifications of all of these JFET devices are almost the same, so we can use them as the equivalent at the circuits. The JFET devices such as 2N4416, NTE312, 2N5640, and 2SK162 are the equivalent devices of 2N3819.
#Mpf102 pinout pdf#
If you need the datasheet in pdf please click this link 2N3819 JFET EQUIVALENT The cutoff frequency value of the 2N3819 JFET device is 700MHz, it is the maximum limit frequency of the device. The thermal resistance of the ambient 2N3819 JEFT device is 357℃/W Cutoff frequency The capacitance value offered by the 2N3819 JFET device at the input is 8pF Thermal resistance The junction temperature of 2N3819 JFET is -55 to +150℃. The power dissipation is 350mW for the 2n3819 JFET device, it is the lowest value for a semiconductor device. pinout is different than other JFET transistors. The zero gate voltage drain current value is 2 to 20nA, it is the current value under the special condition where the gate voltage is zero. It is indicated as Mhos or Siemens and is typically 2.5mmhos to 7.5mmhos for the MPF102 transistor. The drain current value of 2N3819 JFET is 50mA and the gate forward current value is 10mA, it is the load capacity of the component at the circuit. The voltage specifications of 2N3819 JFET shows that it is a general-purpose device. The gate to source cutoff voltage of 2N3819 JFET is 8V. The voltage specs of the 2N3819 JFET device are a drain to gate voltage is 25V, the gate to source voltage is -25V, and the gate to source voltage is -0.5 to -7.5V. N-Channel RF Amplifier This device is designed for electronic switching applications such as low ON resistance analog switching. In this section, we try to explain the electrical specifications of the 2N3819 JFET device, these explanations will be really helpful for the replacement process at the circuits. 2N3819 JFET electrical specification and application description The TO-92 is made with a mixture of epoxy/plastic material which is used for heat resistance property.Īnother advantage of the TO-92 package is the compactness and less weight, this is possible by the size and shape of the transistor package.
The 2N3819 JFET transistor had the general-purpose package TO-92, it is the most compact and also higher heat resistance package. In the source, terminal current flows out from the JFET The gate is the trigger terminal for the JFET device The drain terminal is the current inlet of the JFET device
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